BRAND | Ixys Corporation |
Product | IXDN55N120D1 |
Description | single transistor |
Internal code | 4448677 |
Technical specification | Continuous collector current max. = 100 A collector emitter- = 1200 V gate-source voltage max. = ±20V Power dissipation max. = 450 W Case Sise=SOT-227B Mounting type = SMD Channel type = N number of pins = 4 switching speed = 1MHz Transistor configuration = easy Dimensions = 38.2 x 25.07 x 9.6mm Max. operating temperature = +150°C |
Discover the superior quality and performance of the Ixys Corporation IXDN55N120D1 with RADWARD LTD in United Kingdom . Whether you are looking for reliability or efficiency, this product meets all your industrial needs.
The IXDN55N120D1 is designed to provide optimal performance and durability in various applications. Known for its high-quality construction and innovative features, it is a preferred choice for professionals.
Key Features of IXDN55N120D1 :
At RADWARD LTD , we offer the IXDN55N120D1 at competitive prices and with the fastest delivery times across United Kingdom . Our expert team is ready to assist you with all your inquiries and provide tailored solutions to meet your specific needs.
Why Choose RADWARD LTD ?
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Important Notice: While we supply Ixys Corporation products, RADWARD LTD is not an authorized distributor. All rights are reserved by the manufacturers and their official partners.
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